as seen in problem 3.109, silicon carbide nanowires of diameter d 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. consider finned and unfinned electronics packages in which an extremely small, 10 m 10 m electronics device is sandwiched between two d 100-nm-thick silicon carbide sheets. in both cases, the coolant is a dielectric liquid at 20 c. a heat transfer coefficient of h 1 105 w/m2 k exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are each l 300 nm long. each nano-heat sink includes a 200 200 array of nanofins. determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at Tt <85oC for the unfinned and finned packages.