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For a GaAs p-n junction solar cell, the electron concentration on the p side is 5.6 x 10⁻⁵cm⁻³, and the Fermi level distance from the conduction band on the n side is EEn-Ei = 0.15eV. Given that the intrinsic carrier concentration for GaAs is ni = 2.5 × 10⁶cm⁻³ and the bandgap is = 1.42. Calculate the maximum output voltage that can be obtained from this solar cell.

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